NTD20N03L27-001【PDF 1/5 页】MOSFET N-CH 30V 20A IPAK

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NTD20N03L27,

NVD20N03L27

Power MOSFET

20 Amps, 30 Volts, N ? Channel DPAK

This logic level vertical power MOSFET is a general purpose part

that provides the “best of design” available today in a low cost power

package. Avalanche energy issues make this part an ideal design in.

The drain ? to ? source diode has a ideal fast but soft recovery.

Features

? Ultra ? Low R DS(on) , Single Base, Advanced Technology

? SPICE Parameters Available

? Diode is Characterized for use in Bridge Circuits

? I DSS and V DS(on) Specified at Elevated Temperatures

? High Avalanche Energy Specified

? ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0

? AEC Q101 Qualified ? NVD20N03L27

? These Devices are Pb ? Free and are RoHS Compliant

Typical Applications

? Power Supplies

? Inductive Loads

? PWM Motor Controls

? Replaces MTD20N03L in many Applications

MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)

Rating Symbol Value Unit

http://onsemi.com

20 A, 30 V, R DS(on) = 27 m W

N ? Channel

MARKING

DIAGRAMS

Drain

4 DPAK

CASE 369C

Drain ? to ? Source Voltage

Drain ? to ? Gate Voltage (R GS = 1.0 M W )

Gate ? to ? Source Voltage

? Continuous

? Non ? Repetitive (t p v 10 ms)

V DSS

V DGR

V GS

" 20

" 24

Vdc

1 2

STYLE 2

Gate

Drain

Source

Drain Current

? Continuous @ T A = 25 _ C

? Continuous @ T A = 100 _ C

? Single Pulse (t p v 10 m s)

I D

I DM

Adc

Apk

20N3L

= Device Code

= Year

= Work Week

Total Power Dissipation @ T A = 25 _ C

Derate above 25 ° C

Total Power Dissipation @ T C = 25 ° C (Note 1)

Operating and Storage Temperature Range

Single Pulse Drain ? to ? Source Avalanche

Energy ? Starting T J = 25 ° C

(V DD = 30 Vdc, V GS = 5 Vdc, L = 1.0 mH,

I L(pk) = 24 A, V DS = 34 Vdc)

Thermal Resistance

? Junction ? to ? Case

? Junction ? to ? Ambient

? Junction ? to ? Ambient (Note 1)

Maximum Lead Temperature for Soldering

Purposes, 1/8 ″ from case for 10 seconds

P D

T J , T stg

E AS

R q JC

R q JA

T L

0.6

1.75

? 55 to

150

288

1.67

100

71.4

260

W/ ° CW

° C

° C/W

° C

G = Pb ? Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using the minimum recommended

pad size and repetitive rating; pulse width limited by maximum junction

temperature.

? Semiconductor Components Industries, LLC, 2011

October, 2011 ? Rev. 5

Publication Order Number:

NTD20N03L27/D

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